Best Power Mosfet Transistors in 2026

OVERVIEW: Super sturdy case, 100% accurate components, 400 pieces PNP NPN N-channel(n-ch) type to92 assortment mosfet general purpose power transistors for DIY amplifier

✅ ALL IN ONE: TO 92 20 values 2 N2222 A 2N 2907A 2N 3904 2N 3906 2N 5551 2N 5401 S 8050 S 8550 A 1015(2sa1015) C1815(2sc1815) A42(mpsa42) A92(mpsa92) A 733 C945(2sc945) S9014 BC327 B BC337 B BC547 B BC557 B 2N7000 triode mosfets

✅ MONEY SAVING: We offer you a great value transistor assortment kit of 400 x 20 value NPN and PNP transistors at the most competitive price.

Transistor type: MOSFET

Transistor polarity: N-Channel

Drain current (Id Max): 49A

Nine N-channel and one P-channel transistors with very low on-resistance per silicon area.

This package has 50 transistors and 10 IRF series, just a perfect combination to meet your needs.

Each transistor model is clearly labeled for easy identification.

RFP30N06LE 30A, 60V, ESD rated, avalanche rated, 0.047 Ohm, RDS(ON) = 0.047Ω,2KV ESD protected

FET Type: Mosfet N-Channel, metal oxide; logic level gate

Good stability and uniformity with high EAS

EEEEE 10 Values 70 Pc MOSFET transistor kit with Normal NMOS, Logic, High current and PMOS

NMOS IRFZ44N IRF530N IRF540N IRF640N IRF740 IRF840

Logic Level RFP30N06LE 2N7000

MOSFET driver module compatible with IRF520 , using for IRF520 power MOS tube for PWM adjustment output, compatible with Arduino 3D printer.

Output Voltage: 0-24V; Max Load Current: 5A.

Dimension: 33 * 24mm/1.29 * 0.94inch

RFP30N06LE 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

P30N06L R DS(ON) = 0.047 Ω,2KV ESD Protected

They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers

±20V Gate-source voltage

Dynamic dv/dt rating

Fast switching

Transistor type: MOSFET

Transistor polarity: N-Channel

Drain current (Id Max): 30A

✔️20 PCS IRFZ44N; Transistor type: MOSFET;Transistor polarity: N-Channel

✔️Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A

✔️Operating Temperature Max:175°C;Surface Mount Device: Through Hole Mounting

Transistor type: MOSFET

Transistor polarity: N-Channel

Drain current (Id Max): 200mA

FET type: MOS

Conductive mode: enhanced

Configuration type: N channel

Overview: TO247 Power MOS FET IRFP 260NPBF, Current: 50 A, Voltage: 200V

Original Transistors Bipolar Junction Triode Mosfets

Original Transistors Bipolar Junction Triode for irfp260 irfp 260npbf

Transistor polarity: MOSFET

Transistor polarity: P-Channel

Drain current (Id Max): 27A

Type:Field-Effect Transistor

Brand Name: International Rectifier

Model Number: IRFZ44NPBF

Transistor type: MOSFET

Transistor polarity: N-Channel

Drain current (Id Max): 62A

MOSFET Power N-Channel

Part Number:IRLB8721PBF , Package: TO-220(TO-220AB)

V(dds)=30V; ID(@TC 25°C)=62V

Overview: TO220 Power MOS FET IRF740, Current: 10 A, Voltage: 400V, Power(Max): 125W

Replacement for: IRF740PBF Mosfets

Original Transistors Bipolar Junction Triode for irf 740

IRFP064N Vdss=55V Id=110A N-Channel MOSFET Transistor

RoHS Compliance: Yes

Rds(on)=0.008ohm

N-Channel MOSFET

Part Number: IRFZ34N

Vdss=55V, Rds(on)=0.040ohm, Id=26A

Model : IRF4905; Continuous Drain Current Id : 74A; Drain Source Voltage Vds : 55V; Transistor polarity : P-Channel.

Durable material : The transistor is made of metal oxide semiconductor material, which has good thermal stability and long service life.

Advanced process technology : Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range.

Item Condition: Brand New

12 Months Quality Warranty

Actual item as shown in photos

Product Type:Electronic Component

Item Package Dimension:0.6 cm L X8.7 cm W X16.4 cm H

Item Package Quantity:1

Original IRFP460, the quality is absolutely the best.

Drain-source voltage (Vdss): 500V

Continuous drain current (Id) (at 25°C): 20A

Product Name : Transistor;Model.NO : 2SD1047/ D1047, 2SB817/ B817;Vcbo : 200V

Ic : 12A;Pd (Total Power Dissipation) : 100W;Package : TO-3P

Transistor Type : PNP NPN;Body Size (Each) : 2 x 1.5 x 0.5cm/0.78" x 0.6" x 0.2"(L*W*T)

IRF3205 MOSFET is a field-effect transistor, which can be widely used in analog and digital circuits

Transistor type: MOSFET; Transistor polarity: N channel; Drain current (ID max): 110A; Voltage VDS max:55v power (maximum): 200W

The power transistor is made of high-quality materials and packaged with TO-220. It is durable and can be used for a long time

Model: IRF540N; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; Transistor Polarity: N-Channel.

Durable material: The transistor is made of metal oxide semiconductor material, which has good thermal stability and long service life.

Advanced process technology: Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range.

【Durable material】:The transistor is made of metal oxide semiconductor material, which has good thermal stability and long service life.

【Multifunction】: N channel rectifier with multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation, widely used in large-scale and very large-scale integrated circuits.

【Advanced Technology】: Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range.

Model: IRFP260; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 200V; Transistor Polarity: N-Channel.

Durable material: The transistor is made of metal oxide semiconductor material, which has good thermal stability and long service life.

Advanced process technology: Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range.

Model: 2N7000; Continuous Drain Current Id: 0.3A; Voltage Vds Max: 60V; Transistor polarity: N-Channel.

Durable material: The transistor is made of metal oxide semiconductor material, which has good thermal stability and long service life.

Advanced process technology: Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range.